Фоточувствительность полевого транзистора металл-диэлектрик-полупроводник на основе пленки PbSnTe:In с составом вблизи инверсии зон

نویسندگان

چکیده

A prototype of a metal–insulator–semiconductor field-effect transistor based on PbSnTe:In/(111)BaF2 film with an Al2O3 gate dielectric was designed for the first time. With voltage applied in range – 7.7 V < Ugate +7.7 relative modulation drain-source current Ids/Ids attained near five-fold change at T = 4.2 K. When illuminated rela-tively low (~100 photon/s) fluxes, negative photoconductivity detected accompanied decrease Ids by ~104 times and simultaneous Ids ~103 or even more. The estimated detectivity about 71016 cmHz0.5W-1 wavelength  25 micron accumulation time 0.5 s. qualitative model is discussed which assumes ex-istence deep traps photo-capacitance effect.

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ژورنال

عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki

سال: 2023

ISSN: ['1726-7471', '0320-0116']

DOI: https://doi.org/10.21883/pjtf.2023.03.54461.19426